EC6201 ELECTRONIC DEVICES
| EC6201 | ELECTRONIC DEVICES | L T P C | |||
| | | 3 | 0 | 0 | 3 |
| OBJECTIVES: | | | | | |
| The student should be made to: | | | | | |
· Be exposed to basic electronic devices
· Be familiar with the theory, construction, and operation of Basic electronic devices.
UNIT I SEMICONDUCTOR DIODE 9
PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics.
27
NPN -PNP -Junctions-Early effect-Current equations – Input and Output characteristics of CE, CB CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS 9
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance-MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET-,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9
Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES 9
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.
TOTAL: 45 PERIODS
OUTCOMES:
At the end of the course, the student should be able to:
· Explain the theory, construction, and operation of basic electronic devices.
· Use the basic electronic devices
TEXT BOOKS
1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc.
2007.
REFERENCES:
| 1. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, | 1978. |
2. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice
Hall, 10th edition,July 2008.
0 comments:
Post a Comment